The CCD characteristics for the ESO EEV chips is given in the following table:
|Op. temperature||-110 to -120 C|
|RON||3 electrons for 50 kpix/sec/port|
|Dark Current||4 electrons/h/pixel|
|Linearity||<1% deviation up to full well|
|Full well capacity||150.000 electrons|
|Read-out time||60 sec through 2 channels|
The quantum efficiency for the ESO EEV chips is given here (throughout this homepage, the figures for he guaranteed minimum are assumed) The science grade chip has been delivered at mid-June 1998. Therefore, we also give now the QE measured by EEV. For the most recent measurements at the AOC of the QE at operating temperature see the last column. For further characterization measurements for the final FEROS Science CCD follow this link to Anton Norup Soerensen's FEROS page
|wavelength[nm]||Guaranteed QE[%]||Goal QE[%]||Measured QE[%](EEV)||Measured QE @ -100C [%](AOC)|
The FEROS continuous flow dewar by ESO is shown in the next picture.
If you have any comments on the FEROS project, please send me a mail .
FEROS homepage / A.Kaufer@lsw.uni-heidelberg.de Last modified: Fri Jan 26 10:02:37 MET 2001